ips620 - xxb ips620 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. high current density due to double mesa technology sipos and glass passivation technology used has reliable operation up to 125 junction temperature. low igt parts available. ips620 series are suitable for general purpose applications, a high gate sensitivity is required. symbol value unit i t(rms) 20 a i t(av) 12 a v drm / v rrm 600 v v tm 1.6 v main features parameter symbol value unit rms on C state current (tc = 100 t(rms) 20 a average on C state current ( tc = 100 t(av) 12 a storage junction temperature range operating junction temperature range tstg tj - 40 to +150 - 40 to +125 drm v rrm 600 600 v non repetitive peak off - state voltage tj = 25 dsm v rsm 700 700 v one cycle non repetitive surge current ( half cycle, 50hz) i tsm 200 a i 2t value for fusing (t p = 10ms, half cycle) i 2t 200 a 2s critical rate of rise of turned C on current (i g = 2 x i gt, tj = 125 t p = 20us, tj = 125 gm 5 a average gate power dissipation tj = 125 g(av) 1 w absolute maximum ratings 1 to - 220b ip semiconductor co., ltd. 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com
electrical characteristics (tj = 25 unless otherwise specified) symbol test condition ips620 - xxb unit 30 i gt required dc gate current to trigger at 25 gt required dc voltage to trigger at 25 gd dc gate voltage not to trigger ( tj = 125 drm = rated value) max 0.2 v i l i g = 1.2 i gt max 70 ma i h holding current max 50 ma dv/dt v d = 67% v drm gate open tj = 125 2 thermal resistances symbol parameter value unit r th (j C c) junction to case to - 220b 1.0 symbol test conditions value (max) unit v tm i tm = 30a, tp = 380us tj = 25 drm / i rrm v d = v drm tj = 25 r = v rrm tj = 125 static characteristics 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com ips620 - xxb
4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com package mechanical data to - 220b 3 millimeters min typ max a 4.4 4.6 b 0.61 0.88 c 0.46 0.70 c2 1.23 1.32 c3 2.4 2.72 d 8 .6 9 .7 e 9.8 10.4 f 6.2 6.6 g 4.8 5.4 h 28 29.8 l1 3 .75 l2 1.14 1.7 l3 2.65 2.95 v 40o ips620 - xxb
4 4f, cheong won b/d, 269 hyoje - dong, jongno - gu, seoul, 110 - 480 korea tel : +82 - 70 - 7574 - 2839, fax : +82 - 2 - 6280 - 6382, sales@ipsemiconductor.com ips620 - xxb
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